Low noise CCD input circuit

Details Low noise CCD input circuit Low noise CCD input circuit

1976-07-26

1980-03-04

Munson, Gene M.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 24, 307237, 307297, G11C 1928, H01L 2978, H03K 508, H03K 112

Patent

active

041918967

ABSTRACT:
A "fill and spill" charge coupled device (CCD) input circuit in which the source electrode is clamped to a voltage level (V.sub.T +.DELTA.V) lower than that of the input gate electrode during the fill operation, where (V.sub.T +.DELTA.V) is the gate-to-source voltage of a field effect transistor during conduction. The field effect transistor and input gate electrode are integrated onto the same semiconductor substrate and therefore exhibit the same threshold voltage V.sub.T so that the difference between the surface potential at the source electrode and the surface potential beneath the input gate electrode is independent of V.sub.T.

REFERENCES:
patent: 3881117 (1975-04-01), Tompsett
patent: 3986198 (1976-10-01), Kosonocky
Sequin "Linearity of Electrical Charge Injection into Charge-Coupled Devices", IEEE J. Solid-State Circuits, vol. SC-10, (4/75), pp. 81-92.
Askin et al., "Bit Line Bias Circuit with High-Noise Immunity", IBM Technical Disclosure Bulletin, vol. 17, (3/75), pp. 2923-2924.

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