Low-noise bipolar transistor operating predominantly in the bulk

Details Low-noise bipolar transistor operating predominantly in the bulk Low-noise bipolar transistor operating predominantly in the bulk

1994-09-26

1997-02-11

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With means to increase current gain or operating frequency

257592, H01L 27082, H01L 27102

Patent

active

056024177

ABSTRACT:
A low-noise NPN transistor comprising a cut-off region laterally surrounding, at a given distance, the emitter region in the surface portion of the transistor and of such conductivity as to practically turn off the surface portion of the transistor, so that the transistor operates mainly in the bulk portion. The cut-off region is formed by a P ring astride a P.sup.- type well region and the epitaxial layer.

REFERENCES:
patent: 4047217 (1977-09-01), McCaffrey et al.
patent: 4873199 (1989-10-01), Hunt
patent: 4881111 (1989-11-01), Sanders
Chen et al., "An Advanced Bipolar Transistor with Self-Aligned Ion-Implanted Base and W/Poly Emitter," IEEE Transactions on Electron Devices 35(8): 1322-1327, 1988.

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