Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Lateral bipolar transistor structure
Patent
1994-09-26
1998-10-27
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Lateral bipolar transistor structure
257558, 257592, 257593, H01L 2900, H01L 27082, H01L 27102
Patent
active
058281240
ABSTRACT:
A low-noise PNP transistor comprising a cutoff region laterally surrounding the emitter region in the surface portion of the transistor. The cutoff region has such a conductivity as to practically turn off the surface portion of the transistor, so that the transistor operates mainly in the bulk portion. The cutoff region is formed by an N.sup.+ -type enriched base region arranged between the emitter region and the collector region.
REFERENCES:
patent: 3855007 (1974-12-01), Polata et al.
patent: 3894891 (1975-07-01), Magdo et al.
patent: 4047217 (1977-09-01), McCaffrey et al.
patent: 4239558 (1980-12-01), Morishita et al.
patent: 5156989 (1992-10-01), Williams et al.
Carlson David V.
Loke Steven H.
Santarelli Bryan A.
SGS--Thomson Microelectronics S.r.l.
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