Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1993-11-08
1995-07-11
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257184, H01L 2978, H01L 3300
Patent
active
054323614
ABSTRACT:
An avalanche photodiode includes an avalanche multiplication layer including a superlattice structure consisting of a plurality of barrier and well layers both lattice matched to InP such that the plurality of barrier and well layers are alternately provided one layer on the other layer. The barrier layers consist of InAlAs and the well layers consist of InCaAlAs quarternary system mixed crystal having a forbidden width smaller than 1 eV.
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patent: 4795225 (1989-01-01), Sakai
patent: 4833101 (1989-05-01), Fujii
patent: 4982255 (1991-01-01), Tomita
K. F. Brennan, "Comparison of Multiquantum Well, Graded Barrier, and Doped Quantum Well GaInAs/AlInAs . . . Approach", IEEE Journal of Quantum Electronics, vol. QE-23, No. 8, Aug. 1987, pp. 1273-1282.
T. Kagawa et al, "Impact Ionization Rates In An InGaAs/InAlAs Superlattice", Applied Physics Letters, vol. 55, No. 10, 4 Sep. 1989, pp. 993-995.
K. Mohammed et al, "New High-Speed Long-Wavelength A1O.48InO.52As/GaO.47InO.53As Multiquantum Well Photodiodes", Applied Physics Letters, vol. 47, No. 6, Sep. 1985, pp. 597-599.
Crane Sara W.
Meier Stephen D.
NEC Corporation
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