Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMT

Details Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMT Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMT

1995-06-06

1997-09-02

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257613, 438172, 148 334, 117 89, H01L 310328, H01L 2120

Patent

active

056635834

ABSTRACT:
An epitaxial structure and method of manufacture for a field-effect transistor capable of low-noise and power applications. Preferably, the epitaxial structure includes an N-type barrier layer comprising a wide-gap semiconductor material having the formula Al.sub.1-y Ga.sub.y P.sub.0.71+z Sb.sub.0.29-z.

REFERENCES:
patent: 5430310 (1995-07-01), Shibasaki et al.
Chris G. Van de Walle, "Band Lineups and Deformation Potentials in the Model-Solid Theory", Am. Phys. Soc., Phys. Rev. B., vol. 39, No. 3, Jan., 1989.

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