Low noise amplifier with high intercept point

Details Low noise amplifier with high intercept point Low noise amplifier with high intercept point

1985-08-26

1987-01-20

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330286, 330295, H03F 360

Patent

active

046382615

ABSTRACT:
A low noise amplifier (LNA) circuit including a linear amplifier which generates low noise in the presence of a high level signal and includes a field effect transistor with input and output matching networks and which retains linear operation in the presence of high level (high magnitude) interfering signals.

REFERENCES:
Aihara et al., "11 and 14 GHz-Band Low-Noise GaAs FET Amplifiers", NEC Res. & Dev. (Japan) No. 44, Jan. 1977, pp. 16-22.
Arai et al., "High Power GaAs FET Amplifier for TWT Replacement", Fujitsu Scientific & Technical Journal, Sep. 1979, pp. 63-82.
Honjo et al., "15-Watt Internally Matched GaAs FETs and 20-Watt Amplifier Operating at 6 GHz", NEC Res. & Dev. (Japan), Jan. 1980, pp. 157-162.
Niclas et al., "Application of the Two-Way Balanced Amplifier Concept to Wide-Band Power Amplification Using GaAs MESFETs", IEEE Transactions on Microwave Theory and Techniques, V. MTT-28, No. 3, Mar. 1980, pp. 172-179.
Mitama et al., "Low Noise 7 GHz-and UHF-Band GaAs MESFET Amplifiers for TV Broadcasting Equipment", NEC Res. & Develop, (Japan), Jul. 1978, pp. 69-78.
Pengelly, "Broadband Lumped-Element X Band GaAs FET Amplifier", Electronics Letters, vol. 11, No. 3, Feb. 6, 1975, pp. 58, 59.
Slaymaker et al., "GaAs MESFET Small-Signal X-Band Amplifiers", IEEE Transactions on Microwave Theory and Technique, vol. MTT-24, No. 6, pp. 329-337, Jun. 1976.
Sone et al., "14-GHz Band 1 Watt GaAs FET Amplifier", Electronics Letters, vol. 15, No. 7, Mar. 29, 1979, pp. 212, 213.

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