Low-noise amplifier with high input impedance, particularly for

Amplifiers – With semiconductor amplifying device – Including differential amplifier

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330300, 381120, H03F 345

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active

051701332

ABSTRACT:
The amplifier includes a pair of bipolar input transistors (Q1, Q2), each having a base adapted to receive a differential input signal, a collector and an emitter which is biased by a first fixed current source (M7, M8) of its own and a degeneration resistor (R) which connects the emitters of the two bipolar transistors. The collector of each bipolar transistor is also biased by a second fixed current source (M5, M6) with a smaller current than that of the first source, and the collectors of the two bipolar transistors are furthermore connected to the input terminals of respective MOS amplifier devices (M1, M2, M3, M4, R.sub.L). The amplifier can be made in BCD, BiCMOS or purely CMOS technology, in which case the bipolar transistors are obtained as lateral bipolar transistors.

REFERENCES:
patent: 4833422 (1989-05-01), Atwell
E. A. Vittoz, "MOS Transistors Operated in the Lateral Bipolar Mode and Their Application in CMOS Technology", IEEE Journal of Solid-State Circuits, vol. SC-18, No. 3, pp. 273-279, Jun., 1983.

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