Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1995-12-05
1997-06-24
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330286, 330307, H03F 3193
Patent
active
056420803
ABSTRACT:
A low noise amplifier of the present invention may be useful to a portable cellular phone or a microwave communication system, particularly to a monolithic circuit in which the amplifier includes an input impedance component consisting of capacitors and an inductor, two MESFETs in a cascade connection and a capacitor connected between the two MESFETs so as to enhance the stability of the amplifier when a node strapping a plurality of ground terminals of the amplifier is connected to an external circuit by means of a bonding wire.
REFERENCES:
"13-CM Gaasfet Preamp", Aug. 1984, Designed By Peter Riml.
Kim Choong-Hwan
Kim Min-Gun
Lee Chang-Seok
Park Hyung-Moo
Whang In-Gap
Electronics and Telecommunications Research Institute
Mullins James B.
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