Low-melting-point junction material having high-melting-point pa

Details Low-melting-point junction material having high-melting-point pa Low-melting-point junction material having high-melting-point pa

1992-08-14

1994-05-31

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257772, 257782, 257783, 257741, H01L 2348, H01L 2946, H01L 2962, H01L 2964

Patent

active

053171918

ABSTRACT:
A semiconductor device includes a semiconductor element attached to a support member by a junction material that includes a parent phase of a low-melting-point junction material and fine particles of a high-melting-point junction material which are uniformly dispersed in the low-melting-point material. By heating the junction material to a temperature higher than the melting point of the low-melting-point junction material and lower than the melting point of the high-melting-point junction material, the low-melting-point junction material is brought to a molten state, making the entire junction material fluid. Thus, the size of the junction material need not be adjusted to that of the semiconductor element. Further, with this semiconductor device, the contact area between the low-melting-point junction material and the high-melting-point junction material is extremely large so that the requisite time for making the composition of the junction material uniform is shortened.

REFERENCES:
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patent: 4740252 (1988-04-01), Hasegawa et al.
patent: 4847675 (1989-07-01), Eng
patent: 4865654 (1989-09-01), McLellan

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