Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2008-12-04
2011-12-06
Pham, Thanh V (Department: 2894)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257S368000, C257S379000, C438S430000
Reexamination Certificate
active
08071461
ABSTRACT:
Electronic elements (44, 44′, 44″) having an active device region (46) and integrated passive device (IPD) region (60) on a common substrate (45) preferably include a composite dielectric region (62, 62′, 62″) in the IPD region underlying the IPD (35) to reduce electromagnetic (E-M) (33) coupling to the substrate (45). Mechanical stress created by plain dielectric regions (36′) and its deleterious affect on performance, manufacturing yield and occupied area may be avoided by providing electrically isolated inclusions (65, 65′, 65″) in the composite dielectric region (62, 62′, 62″) of a material having a thermal expansion coefficient (TEC) less than that of the dielectric material (78, 78′, 78″) in the composite dielectric region (62, 62′, 62″). For silicon substrates (45), non-single crystal silicon is suitable for the inclusions (65, 65′, 65″) and silicon oxide for the dielectric material (78, 78′, 78″). The inclusions (65, 65′, 65″) preferably have a blade-like shape separated by and enclosed within the dielectric material (78, 78′, 78″).
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Bennett Mark A.
Burger Wayne R.
Kerr Colin
Ren Xiaowei
Freescale Semiconductor Inc.
Ingrassia Fisher & Lorenz PC
Payen Marvin
Pham Thanh V
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