Low loss silicon waveguide and method of fabrication thereof

Details Low loss silicon waveguide and method of fabrication thereof Low loss silicon waveguide and method of fabrication thereof

2006-03-21

2006-03-21

Ullah, Akm Enayet (Department: 2874)

Optical waveguides

Planar optical waveguide

C385S014000, C385S130000, C385S131000, C385S132000, C438S041000

Reexamination Certificate

active

07016587

ABSTRACT:
A silicon rib waveguide that has a silicon nitride cladding layer of predetermined thickness to reduce optical loss of light propagating therethrough. An exemplary embodiment of the waveguide is fabricated by using a silicon-on-insulator structure having a single crystal silicon layer bonded to a silicon wafer with a layer of insulative material. An etch resistant masking layer is deposited on the outer surface of the single crystal silicon layer and patterned to produce vias therein. A RIE etching process is used through the vias in the masking layer to form at least one rib bounded by a pair of parallel trenches. The masking layer is removed and a silicon nitride cladding layer is deposited on the rib side and end walls and on the trenches.

REFERENCES:
patent: 5841931 (1998-11-01), Foresi et al.
patent: 5882532 (1999-03-01), Field et al.
patent: 6063299 (2000-05-01), Drake et al.
patent: 6470130 (2002-10-01), Walker et al.
patent: 6510275 (2003-01-01), Tran et al.
patent: 6674950 (2004-01-01), Yang et al.
patent: 6790689 (2004-09-01), Behfar
patent: 2001/0024559 (2001-09-01), Kling
patent: 2004/0008968 (2004-01-01), Lee et al.
patent: 2005/0152658 (2005-07-01), Keyser

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