Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1991-07-26
1993-10-12
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257192, 257619, H01L 2980, H01L 2964, H01L 29205, H01L 2906
Patent
active
052528421
ABSTRACT:
A semiconductor device has material removed from the back of the substrate and a manufacturing process is provided for manufacturing these devices. In the exemplary embodiment, a GaAs FET chip is formed by a process including the step of etching the GaAs substrate from the back of the chip in a defined removal region to reduce the dielectric constant in the region of the source-to-drain path. A buffer layer of differing material provided between the active layers and the substrate prevents etching of the active layers during the removal process. To allow simplified etching patterns, the source-to-drain path may be laid out on the surface of the chip in a variety of patterns, including "packed" patterns concentrating a large path area in a small surface area of the chip. Optionally, this buffer layer may also be etched away in a further processing step. An insulating layer of material may be added to the back side of the chip in the etched region to increase structural strength, and a pressure relief ventilation path may be provided connecting the removal region to the outside at an edge or at the surface of the chip.
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Document Entitled "Processing, Fabrication, and Demonstration of High Temperature Ceramic Superconductors: Integrated Microwave Circuits of Multilayer YBCO Film Structures", Prepared by Westinghouse Electric Corp., Feb. 20, 1990.
Buck Daniel C.
Dawson Dale E.
Degenford James E.
Imhoff Scott A.
Lee Soong H.
Maire D. G.
Munson Gene M.
Westinghouse Electric Corp.
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