Low loss power switch

Details Low loss power switch Low loss power switch

1992-08-26

1994-03-01

Levy, Stuart S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307254, 307546, H03K 1760

Patent

active

052910822

ABSTRACT:
A power switch comprising: at least one bipolar transistor (T1), the base of which is controlled through an amplifier 12 by a control signal (VC) and a sensor (10) of the current (I) flowing through the switch; at least one insulated gate bipolar transistor (IGBT) (T2) connected in parallel to said at least one bipolar transistor (T1), the gate of which is controlled by said control signal (VC); and means (S) for inhibiting the base control of said at least one bipolar transistor (T1) when the current flowing through the switch is lower than a predetermined value (I.sub.0).

REFERENCES:
patent: 4356408 (1982-10-01), Glennon
patent: 5063307 (1991-11-01), Zommer
patent: 5166541 (1992-11-01), Mori
"A Switching Circuit Composed of BJT and MOS-FET", by Yasuo Ohashi et al., The Transactions of the IECE of Japan, vol. E69, No. 4, Apr. 1986, pp. 509-511.

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