Low-loss P-i-n diode

Details Low-loss P-i-n diode Low-loss P-i-n diode

1982-06-03

1984-10-09

Edlow, Martin H.

357 63, 357 90, 357 88, H01L 2912

Patent

active

044764812

ABSTRACT:
A low-loss P-i-n diode includes an i-type layer consisting of first and second i-type regions formed on the cathode layer of the diode and the i-type has a thickness W.sub.i of less than 25 .mu.m. The impurity concentration of the first i-type region is higher than that of the second i-type region. To obtain a good forward-voltage V.sub.f, W.sub.i.sup.2 /.tau. is selected to be in the range of 20-200cm.sup.cm.sup.2/sec and the carrier lifetime .tau. of the i-type layer is controlled by a carrier lifetime killer with a small resistivity compensation effect which is diffused into the i-type layer. The P-i-n diode has a high reverse breakdown voltage, small forward-voltage drop and a short recovery time.

REFERENCES:
patent: 2843516 (1958-07-01), Herlet
patent: 3640783 (1972-02-01), Bailey
patent: 3984858 (1976-10-01), Cornu et al.
patent: 4149906 (1979-04-01), De La Moneda
patent: 4410902 (1983-10-01), Malik

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