Low loss fet

Details Low loss fet Low loss fet

1988-09-30

1989-09-12

James, Andrew J.

357 239, 357 41, 357 55, 357 56, 357 67, 357 71, H01L 2978, H01L 2702, H01L 2906

Patent

active

048664928

ABSTRACT:
An improved FET is described in which a conductive layer connects the source structure to a truncated source extension which underlies an insulative gate layer and connects to a channel region. The conductive layer is of substantially lower resistivity than the source extension, thereby significantly reducing the lateral resistance of the device to diminish losses and reduce the likelihood of a parasitic bipolar transistor turning on. The invention can be implemented in both vertical and lateral devices. For a lateral device the drain is connected by a low resistance conductive layer to the gate region in a manner similar to the source.

REFERENCES:
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4206469 (1980-06-01), Hanes et al.
patent: 4419811 (1983-12-01), Rice
patent: 4503598 (1985-03-01), Vora et al.
patent: 4598461 (1986-07-01), Love
patent: 4644386 (1987-02-01), Nishizawa et al.
patent: 4665414 (1987-05-01), Koeneke et al.
patent: 4675713 (1987-06-01), Terry et al.
patent: 4797718 (1989-01-01), Schubert
Siliconix, Inc. MOSPOWER Design Catalog, Jan. 1983, pp. 6-1, 6-65 through 6-67 and 6-78 throgh 6-85.
Intersil Corp. POWER MOS Catalog, 1981, pp. 49-59.

Affiliated with

Also associated with

Rating

Low loss fet does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low loss fet, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low loss fet will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-920642