Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1996-07-15
1998-09-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257189, 257226, 257228, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
058083294
ABSTRACT:
An imaging device (10, 10') has a plurality of unit cells (11) that contribute to forming an image of a scene. The imaging device includes a layer of wide bandgap semiconductor (18) material (e.g., silicon) having photogate charge-mode readout circuitry (20, 22, 24), such as CCD or CMOS circuitry, disposed upon a first surface of the layer. In one embodiment a second, opposing surface of the layer is bonded at a heterojunction interface or atomic bonding layer (16) to a surface of a layer of narrower bandgap semiconductor material (e.g., InGaAs or HgCdTe), that is selected for absorbing electromagnetic radiation having wavelengths longer than about one micrometer (i.e., the NIR or longer) and for generating charge carriers. The generated charge carriers are transported across the heterojunction interface for collection by the photogate charge-mode readout circuitry. The layer of narrower bandgap material may be disposed upon a surface of a transparent substrate, and also may be differentiated into a plurality of mesa structures (14a). In further embodiments the absorbing layer may have an equivalent or a wider bandgap than the layer having the readout circuitry.
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Ando Ken J.
Jack Michael D.
Kosai Kenneth
Rhiger David R.
Lenzen, Jr. G. H.
Mintel William
Raytheon Company
Schubert W. C.
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