Low leakage MIM capacitor

Details Low leakage MIM capacitor Low leakage MIM capacitor

2008-05-27

2008-05-27

Purvis, Sue A. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S296000, C257S300000, C257S315000, C257S906000, C257SE21008, C257SE21647, C438S957000

Reexamination Certificate

active

07378719

ABSTRACT:
Capacitor structures for use in integrated circuits and methods of their manufacture. The capacitor structures include a bottom electrode, a top electrode and a dielectric layer interposed between the bottom electrode and the top electrode. The capacitor structures further include a metal oxide buffer layer interposed between the dielectric layer and at least one of the bottom and top electrodes. Each metal oxide buffer layer acts to improve capacitance and reduce capacitor leakage. The capacitors are suited for use as memory cells and apparatus incorporating such memory cells, as well as other integrated circuits.

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