Low-leakage JFET having increased top gate doping concentration

Details Low-leakage JFET having increased top gate doping concentration Low-leakage JFET having increased top gate doping concentration

1992-03-12

1994-06-07

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257285, 257740, 257751, H01L 2980

Patent

active

053192273

ABSTRACT:
A low-leakage-current JFET having electrically isolated top and bottom gates. The structure employs enclosed geometry wherein one source/drain region fully surrounds the other source/drain region. Connection to the top gate is made through a diffusion-barrier to prevent penetration of metallization into the top gate contact region. A non-penetrating contact layer is provided on the upper surface of the top gate so that the material of the contact layer does not enter the top gate region to any significant extent. Both the channel region and the shield layer are formed by ion-implantation.

REFERENCES:
patent: 4107726 (1978-08-01), Schilling
patent: 4176368 (1979-11-01), Compton
patent: 4456918 (1984-06-01), Beasom

Affiliated with

Also associated with

Rating

Low-leakage JFET having increased top gate doping concentration does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low-leakage JFET having increased top gate doping concentration, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-leakage JFET having increased top gate doping concentration will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-794852