Low leakage gate protection circuit

Details Low leakage gate protection circuit Low leakage gate protection circuit

1977-09-27

1978-11-21

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

307304, 330254, 330298, H03F 316

Patent

active

041268300

ABSTRACT:
The protection circuit for a first, signal amplifying, insulated-gate field-effect transistor (IGFET) whose gate electrode is connected to an external signal input terminal includes a second IGFET whose gate is also connected to the input terminal. The gate insulators of the IGFETs are protected by a network which includes a, normally reverse biased, diode connected between the gates of the IGFETs and a first node. The second IGFET forms the input of a unity voltage gain, non-inverting, buffer amplifier whose output is applied to the first node whereby a voltage of approximately the same value as the input voltage is applied to the first node. The buffer amplifier thus maintains the voltage across the gate protection diode at approximately zero volt, thereby substantially reducing its leakage current.

REFERENCES:
patent: 3870968 (1975-03-01), Vosteen et al.

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