Low leakage ESD network for protecting semiconductor devices and

Electricity: electrical systems and devices – Safety and protection of systems and devices – Load shunting by fault responsive means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

361 91, 361111, 361118, H02H 900

Patent

active

055637574

ABSTRACT:
A low leakage ESD network (24) is provided for protecting a semiconductor device (22). The ESD network (24) comprises an ESD circuit (28) and a bias circuit (30). The ESD circuit (28) is connected to an input of the semiconductor device (22). The ESD circuit (28) is operable to protect the input of the semiconductor device (22) against electro-static discharge. The bias circuit (30) is connected to the input of the semiconductor device (22) and to the ESD circuit (28). The bias circuit (30) is operable to actively bias the ESD circuit (28) such that a voltage difference across each current leakage path in the ESD circuit (28) is held substantially equal to zero volts during normal operation of the semiconductor device (22).

REFERENCES:
patent: 4158863 (1979-06-01), Naylor
patent: 4694277 (1987-09-01), Takahashi
patent: 5416030 (1995-05-01), Elkind et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Low leakage ESD network for protecting semiconductor devices and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low leakage ESD network for protecting semiconductor devices and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low leakage ESD network for protecting semiconductor devices and will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-61604

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.