Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2005-01-04
2005-01-04
Smith, Matthew (Department: 2825)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S292000
Reexamination Certificate
active
06838714
ABSTRACT:
A photodiode for use in an imager having an improved charge leakage. The photodiode has a doped region that is spaced away from the field isolation to minimize charge leakage. A second embodiment of invention provides a second implant to improve charge leakage to the substrate. The photodiodes according to the invention provide improve charge leakage, improved reactions to dark current and an improved signal to noise ratio. Also disclosed are processes for forming the photodiode.
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Cummings Steven D.
Figura Thomas A.
Juengling Werner
Rhodes Howard E.
Dickstein , Shapiro, Morin & Oshinsky, LLP
Malsawma Lex H.
Micro)n Technology, Inc.
Smith Matthew
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