Low leakage diodes, including photodiodes

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

Reexamination Certificate

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Details

C257S292000

Reexamination Certificate

active

06838714

ABSTRACT:
A photodiode for use in an imager having an improved charge leakage. The photodiode has a doped region that is spaced away from the field isolation to minimize charge leakage. A second embodiment of invention provides a second implant to improve charge leakage to the substrate. The photodiodes according to the invention provide improve charge leakage, improved reactions to dark current and an improved signal to noise ratio. Also disclosed are processes for forming the photodiode.

REFERENCES:
patent: 4280271 (1981-07-01), Lou et al.
patent: 4663645 (1987-05-01), Komori et al.
patent: 5032535 (1991-07-01), Kamijo et al.
patent: 5352620 (1994-10-01), Komori et al.
patent: 5495116 (1996-02-01), Funakoshi et al.
patent: 5496750 (1996-03-01), Moslehi
patent: 5861655 (1999-01-01), Kozuka et al.
patent: 5942775 (1999-08-01), Yiannoulos
patent: 5956588 (1999-09-01), Choi et al.
patent: 6140670 (2000-10-01), Chang
patent: 6143612 (2000-11-01), Derhacobian et al.
patent: 6150676 (2000-11-01), Sasaki
patent: 6201270 (2001-03-01), Chen
patent: 6218691 (2001-04-01), Chung et al.
patent: 6259145 (2001-07-01), Connolly et al.
patent: 4-315442 (1992-04-01), None
patent: 5-102403 (1993-04-01), None

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