Low leakage current photodetector arrays

Details Low leakage current photodetector arrays Low leakage current photodetector arrays

1993-05-26

1995-02-07

Hannaher, Constantine

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

257190, H01L 21365, H01L 21477

Patent

active

053877969

ABSTRACT:
Leakage current in InGaAs/InAsP/InP lattice mismatched photodetectors can be reduced by providing graded InAsP compositions having abrupt interfaces between successive layers that maintain a lattice mismatch between the layers of 0.13% or less; doping the absorption layer with high levels of sulfur and by thermal cycling of the wafers. High yields of low leakage current photodetector arrays are obtained.

REFERENCES:
M. C. Boissy, D. Digue, J. Hallais and C. Schemali, "An efficient GaInAs photodiode for near-infrared detection." Proceedings of the 6th International Symposium on Gallium Arsenide and Related Compounds, Edinburgh, Scotland (20-22 Sep. 1976) [Inst. Phys. Conf. Ser. No. 33a.COPYRGT. 1977] pp. 427-436.
"512 and 1024 Element Linear InGaAs Detector . . . Sensing", Joshi et al, SPIE Con Jul. 1992 Arrays for Near Infrared.
Near Infrared InGaAs Detectors and Arrays . . . : Joshi et al.
"Current Status of InGaAs Detector Arrays . . . " Olsen et al SPIE 1540, 1991.
"Room Temperature Detectors . . . ", Ban et al, SPIE vol. 1106, 1989.
"Buttable Arrays of 300 Multiplexed . . . " Moy et al, SPIE vol. 686, 1986.
Defects and Defect Reduction . . . Sharan et al, J. Electronic Materials, vol. 20 No. 2, 1991.

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