Patent
1988-03-10
1989-03-28
James, Andrew J.
357 91, 357 4, H01L 2702
Patent
active
048168939
ABSTRACT:
A method of fabricating CMOS circuit devices on an insulator substrate is disclosed in which a solid phase epitaxy process is applied to islands for the individual devices in the same step as the channel dopant implants. An ion species, preferably silicon for a silicon island, is implanted into each island at an energy and dosage sufficient to amorphize a buried layer of the island in the vicinity of an underlying insulated substrate; silicon-on-sapphire (SOS) is preferably employed. The buried layers are then recrystallized, using the unamorphized portions of the semiconducotr islands as crystallization seeds. Islands of generally uniform, high quality semiconductor material are thus obtained which utilize dopant implants more efficiently, and avoid prior parasitic transistors and leakage currents. By implanting the ion species to a greater depth than the nominal island thickness for n-channel devices, and to a lesser depth than the nominal island thickness for p-channel devices, back channel current leakage is reduced while undesirable aluminum auto doping is avoided for the p-channel devices.
REFERENCES:
patent: 4509990 (1985-04-01), Vasudev
patent: 4659392 (1987-04-01), Vasudev
Mayer Donald C.
Vasudev Prahalad K.
Denson-Low Wanda K.
Hughes Aircraft Company
James Andrew J.
Karambelas A. W.
Laslo V. G.
LandOfFree
Low leakage CMOS/insulator substrate devices and method of formi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low leakage CMOS/insulator substrate devices and method of formi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low leakage CMOS/insulator substrate devices and method of formi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1663583