Low-leakage borderless contacts to doped regions

Details Low-leakage borderless contacts to doped regions Low-leakage borderless contacts to doped regions

1996-08-16

1999-04-13

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

257382, 257751, 257754, H01L 2348, H01L 2352, H01L 2940

Patent

active

058941690

ABSTRACT:
A semiconductor device having low-leakage borderless contacts is formed by etching contact openings adjacent first and second electronic elements of opposite dopant type, conformally depositing a thin doped polysilicon layer, protecting the electronic element of similar dopant-type, removing the thin doped polysilicon layer adjacent the oppositely doped electronic element diffusing dopant from said polysilicon layer into a side wall of the electronic element of similar dopant-type, and then depositing tungsten within the contact openings.

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