Low-k dielectric film with good mechanical strength that...

Details Low-k dielectric film with good mechanical strength that... Low-k dielectric film with good mechanical strength that...

2006-12-05

2006-12-05

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S644000, C257S751000, C257S752000, C257S761000, C257S763000

Reexamination Certificate

active

07145245

ABSTRACT:
The present invention discloses a method including providing a substrate; forming a dielectric over the substrate, the dielectric having a k value of about 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; forming an opening in the dielectric; and forming a conductor in the opening.The present invention further discloses a structure including a substrate; a dielectric located over the substrate, the dielectric having a k value of 2.5 or lower, the dielectric having a Young's modulus of elasticity of about 15 GigaPascals or higher; an opening located in the dielectric; and a conductor located in the opening.

REFERENCES:
patent: 6010962 (2000-01-01), Liu et al.
patent: 6323120 (2001-11-01), Fujikawa et al.
patent: 6451712 (2002-09-01), Dalton et al.
patent: 6472306 (2002-10-01), Lee et al.
patent: 6806161 (2004-10-01), Ko et al.
patent: 2003/0224593 (2003-12-01), Wong

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