Low-K dielectric etch process for dual-damascene structures

Details Low-K dielectric etch process for dual-damascene structures Low-K dielectric etch process for dual-damascene structures

2007-03-20

2007-03-20

Zarneke, David A. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21579

Reexamination Certificate

active

10851263

ABSTRACT:
A method includes performing a first etch process to form a via hole in a dual-damascene integrated circuit structure comprising a first dielectric layer and a second dielectric layer. The via hole extends at least substantially through the first and second dielectric layers. The method further includes filling at least a portion of the via hole with a plug material to form a plug within the via hole, and performing a second etch process through the first dielectric layer and the portion of the plug adjacent the first dielectric layer to form a trench in the first dielectric layer. The second etch process is performed using an RF power of less than 1,000 Watts and using an etching chemistry that includes CF4and N2. For example, second etch process may use an etching chemistry of CF4/N2/Ar, which may additionally include one or both of CO and O2.

REFERENCES:
patent: 6548901 (2003-04-01), Cote et al.
patent: 6569777 (2003-05-01), Hsu et al.
patent: 6649531 (2003-11-01), Cote et al.
patent: 6900123 (2005-05-01), Jiang et al.
patent: 7015133 (2006-03-01), Su et al.
patent: 2004/0192058 (2004-09-01), Chu et al.

Affiliated with

Also associated with

Rating

Low-K dielectric etch process for dual-damascene structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low-K dielectric etch process for dual-damascene structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-K dielectric etch process for dual-damascene structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3764425