Low k and ultra low k SiCOH dielectric films and methods to...

Details Low k and ultra low k SiCOH dielectric films and methods to... Low k and ultra low k SiCOH dielectric films and methods to...

2006-04-18

2006-04-18

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S633000, C257S634000, C257S635000, C257S636000, C257S645000, C257S646000, C257S644000, C174S13800J

Reexamination Certificate

active

07030468

ABSTRACT:
Dielectric materials including elements of Si, C, O and H having specific values of mechanical properties (tensile stress, elastic modulus, hardness cohesive strength, crack velocity in water) that result in a stable ultra low k film which is not degraded by water vapor or integration processing are provided. The dielectric materials have a dielectric constant of about 2.8 or less, a tensile stress of less than 45 MPa, an elastic modulus from about 2 to about 15 GPa, and a hardness from about 0.2 to about 2 GPa. Electronic structures including the dielectric materials of the present invention as well as various methods of fabricating the dielectric materials are also provided.

REFERENCES:
patent: 6472306 (2002-10-01), Lee et al.
patent: 2004/0089470 (2004-05-01), Shimoto et al.

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