Low junction leakage MOSFETs

Details Low junction leakage MOSFETs Low junction leakage MOSFETs

1994-03-09

1995-08-08

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 30, 437 41, 437151, 437161, H01L 21265

Patent

active

054398312

ABSTRACT:
Shallow junction field effect transistors are made by a low temperature process comprising ion implanting source/drain regions through a buffer layer in two steps, the first an ion implant at high dosage and low energy and the second an ion implant at low dosage and high energy. Ion implantation through the buffer layer avoids crystallographic damage to the silicon substrate.
By grading the sidewall spacers of the gate electrode, more or fewer ions can be implanted through the spacer foot to ensure continuity between the source/drain regions and the channel region under the gate electrode.

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