Low intermodulation distortion FET amplifier using parasitic res

Details Low intermodulation distortion FET amplifier using parasitic res Low intermodulation distortion FET amplifier using parasitic res

1992-12-11

1994-05-24

Mullins, James B.

Amplifiers

With semiconductor amplifying device

Including field effect transistor

330294, 330306, H03F 3193

Patent

active

053152654

ABSTRACT:
An RF power FET amplifier is designed using parasitic resonant matching to reduce low intermodulation distortion. An input inductor is connected in parallel with the capacitance of the common-source input capacitance, an output inductor is connected in parallel with the common-source output capacitance. Feedback provided by the common-source capacitance between gate and drain is utilized to improve linearization and stability. The field effect transistor is designed so that the feedback signal resulting from the feedback capacitance is 180.degree. with respect to the forward gain.

REFERENCES:
patent: 3441865 (1969-04-01), Siwko
patent: 3495183 (1970-02-01), Doundoulakis et al.
patent: 4771247 (1988-09-01), Jacomb-Hood

Affiliated with

Also associated with

Rating

Low intermodulation distortion FET amplifier using parasitic res does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low intermodulation distortion FET amplifier using parasitic res, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low intermodulation distortion FET amplifier using parasitic res will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1975647