Low-inductance semiconductor apparatus

Details Low-inductance semiconductor apparatus Low-inductance semiconductor apparatus

1988-12-22

1990-01-09

Clawson, Jr., Joseph E.

357 74, 357 76, 357 77, H01L 21603, H01L 2514, H01L 2304

Patent

active

048931730

ABSTRACT:
A low-inductance semiconductor apparatus has a flat-topped base which support a semiconductor element. A cathode whose height is roughly on the order of its diameter sits atop the semiconductor element. The cathode has a flat upper surface with a threaded hole formed in the center thereof into which a lead with a threaded end can be screwed. The inside of the semiconductor apparatus is sealed by a cap which is secured in an airtight manner to the cathode and to a casing which is secured to the top surface of the base. The base can be either flat-bottomed or studded.

REFERENCES:
patent: 4499485 (1985-02-01), Shierz et al.
patent: 4591896 (1986-05-01), Kikuchi
patent: 4646131 (1987-02-01), Amagasa et al.
Westinghouse Data Book, 1978.

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