Low inductance resistor

Amplifiers – With semiconductor amplifying device – Integrated circuits

Patent

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Details

338 22SD, 357 51, H03F 314

Patent

active

041340809

ABSTRACT:
A low inductance resistor comprising a metalized, planar silicon wafer, positioned beneath the emitter tabs of an RF power transistor to provide dc balancing and stabilization and thus eliminate the need for more costly collector feedback circuits.

REFERENCES:
patent: 2978661 (1961-04-01), Miller et al.
patent: 3271685 (1966-09-01), Husher et al.
patent: 3359504 (1967-12-01), Bento et al.

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