Low-inductance power semiconductor module

Details Low-inductance power semiconductor module Low-inductance power semiconductor module

1995-05-05

1996-11-12

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

257707, 257705, 257723, H01L 2310, H01L 2334

Patent

active

055743129

ABSTRACT:
In the case of a power semiconductor module (1) according to the invention, substrates (8) having a power semiconductor assembly (2) are fitted on both sides of a heat sink (3). The power semiconductor assemblies (2) are made contact with by a stack of contact laminates (4), which contact laminates (4) run parallel to the heat sink (3). A very low-inductance structure is obtained thereby.

REFERENCES:
patent: 4126883 (1978-11-01), Martin
patent: 5408128 (1995-04-01), Furnival
patent: 5444295 (1995-08-01), Lake et al.
Japanese Abstract JP 5-198964(A); E-1462, Nov. 19, 1993, vol. 7, No. 629, "Power Supply Apparatus".

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