Low inductance GTO switching circuit for an inverter

Electric power conversion systems – Current conversion – Using semiconductor-type converter

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Details

363141, 363 68, 363 58, H02M 7521, H02H 7122

Patent

active

051648938

ABSTRACT:
With respect to their connection to snubber capacitors (C1, C2), a discharge resistor (12) connecting these snubber capacitors, and a link capacitor bank (3), inverter circuits with GTO thyristors (T1, T2) connected in series have parasitic leakage inductances which limit the level of the permissible link direct voltage. In order to reduce the leakage inductances, the snubber capacitors (C1, C2) are surrounded by effectively conducting capacitor covers (17). Sheet-metal shielding covers are fitted over the two ends of the discharge resistor (12). Parallel and series connected capacitors of the link capacitor bank (3) are connected to the positive
egative terminals (23, 24) of the GTO thyristors (T1, T2) in the middle of a heat sink connecting strainer (33), the supply leads being guided essentially parallel and the capacitors being arranged in opposite planes.

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Siemens-Schuckertwerke AG, Gleichrichteranordnung Apr. 23, 1965, pp. 1-7.
"Gate Circuit for GTO Thyristor", Pat. Abstracts of Japan, Dec. 15, 1987, vol. 11, No. 384.
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"GTO Inverter for AC Traction Drives", Ueda, et al., IEEE Transactions on Industry Applications, vol. IA-19, No. 3, May/Jun. 1983, pp. 343-348.

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