Low-inductance circuit arrangement for power semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE25016, C257S723000, C257S685000, C363S141000, C363S132000, C361S806000

Reexamination Certificate

active

10643391

ABSTRACT:
A circuit arrangement for a power semiconductor module provides low parasitic inductances and low loss. An electrically insulating substrate supports metallic ribbon connectors which in turn power attached semiconductor components. DC port conducts are positioned in close proximity to each other and are arranged in at least one partial sector parallel and in close proximity to the surface of the substrate and/or the ribbon connectors and electrically insulated from the same, and at least one AC port conductor is similarly attached. The port conductors include surface elements enabling simplified low-inductance wire bond connection from the port conductors to either the power semiconductor components or ribbon connectors or both.

REFERENCES:
patent: 4458305 (1984-07-01), Buckle et al.
patent: 4816984 (1989-03-01), Porst et al.
patent: 5459356 (1995-10-01), Schulze et al.
patent: 5585672 (1996-12-01), Koike et al.
patent: 5929519 (1999-07-01), Mori et al.
patent: 5956231 (1999-09-01), Yamada et al.
patent: 6381161 (2002-04-01), Mourick
patent: 6525950 (2003-02-01), Shirakawa et al.
patent: 6566750 (2003-05-01), Sofue et al.
patent: 6664629 (2003-12-01), Maeno
patent: 6793502 (2004-09-01), Parkhill et al.
patent: 6906404 (2005-06-01), Maly et al.
patent: 6987670 (2006-01-01), Ahmed et al.
patent: 19618978 (1996-05-01), None
patent: 19752408 (1997-11-01), None
Germain Examination Report for DE 102 37 561.5-33 of Mar. 18, 2003 (2-pages).
German Decision to Grant for DE 102 37 561.5-33, PA12 2002 DE of Mar. 28, 2003 (1-page).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Low-inductance circuit arrangement for power semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low-inductance circuit arrangement for power semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-inductance circuit arrangement for power semiconductor... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3869091

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.