Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2007-06-05
2007-06-05
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257SE25016, C257S723000, C257S685000, C363S141000, C363S132000, C361S806000
Reexamination Certificate
active
10643391
ABSTRACT:
A circuit arrangement for a power semiconductor module provides low parasitic inductances and low loss. An electrically insulating substrate supports metallic ribbon connectors which in turn power attached semiconductor components. DC port conducts are positioned in close proximity to each other and are arranged in at least one partial sector parallel and in close proximity to the surface of the substrate and/or the ribbon connectors and electrically insulated from the same, and at least one AC port conductor is similarly attached. The port conductors include surface elements enabling simplified low-inductance wire bond connection from the port conductors to either the power semiconductor components or ribbon connectors or both.
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Germain Examination Report for DE 102 37 561.5-33 of Mar. 18, 2003 (2-pages).
German Decision to Grant for DE 102 37 561.5-33, PA12 2002 DE of Mar. 28, 2003 (1-page).
Heilbronner Heinrich
Stockmeier Thomas
Chu Chris C.
Lackenbach & Siegel LLP
Parker Kenneth
Semikron Elektronik GmbH & Co. KG
Young Andrew F.
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