Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1995-02-15
1996-06-25
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257666, 257664, H01L 2352, H01L 23475, H01L 2540
Patent
active
055302858
ABSTRACT:
A SMD with an RF semiconductor chip (1) encapsulated in a plastic housing is provided. The device has at least one active RF component or an integrated RF circuit with terminal locations, these being contacted by bond wires (4) in the interior of the housing to interconnects of a system carrier (2, 3) that form the outer terminals, the semiconductor chip to be secured on the system carrier. The housing is cost-beneficial and has good RF properties even at extremely high frequencies, e.g., above 2.4 GHz. The system carrier (2, 3) is formed as a co-planar three-band stripline composed of at least one inner RF conductor (3) and outer conductors (7) proceeding at a lateral spacing therefrom which serve as ground terminal. The outer conductors (7) form a planar connection in the housing interior on which the semiconductor chip (1) is secured lying opposite the end of the inner RF conductor (3).
REFERENCES:
patent: 4023053 (1977-05-01), Shimizu et al.
patent: 4791473 (1988-12-01), Phy
patent: 5057805 (1991-10-01), Kadowski
patent: 5155575 (1992-10-01), Zimmermann
Japanese Patent Abstracts, vol. 5, No. 63, "Semiconductor Device", H. Tetsuya, Jul. 2, 1981.
Clark S. V.
Crane Sara W.
Siemens Aktiengesellschaft
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