Low impedance interconnection assembly for high frequency switch

Electricity: electrical systems and devices – Housing or mounting assemblies with diverse electrical... – For electronic systems and devices

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Details

361734, 361775, H05K 720

Patent

active

053133633

ABSTRACT:
A low impedance interconnection assembly for use with high frequency switching power semiconductor devices includes a modular capacitor, multi-layer bus structure and semiconductor switching devices assembled as a laminated unitary structure. Terminals electrically and physically connect the positive electrode of the modular capacitor to the positive DC voltage potential carried by the bus structure and the positive DC input of the semiconductor switch and other terminals electrically and mechanically couple the negative electrode of the modular capacitor to the negative DC voltage potential layer of the bus structure and the negative DC input of the switching device. The modular capacitor is made of a number of capacitor elements having their respective positive electrodes bonded to a copper foil pattern strip to define a positive electrode and their respective negative electrode terminals to a second copper foil strip to define the negative electrode. All capacitors share in supplying high slew rate current to the semiconductor switching devices to reduce losses in the capacitor.

REFERENCES:
patent: 4755910 (1988-07-01), Val
patent: 4905123 (1990-02-01), Windle et al.
patent: 5053920 (1991-10-01), Staffiere et al.

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