Low impedance diode mounting structure and housing

Details Low impedance diode mounting structure and housing Low impedance diode mounting structure and housing

1974-06-04

1976-03-23

James, Andrew J.

357 65, 357 74, 357 72, 357 75, 357 81, H01L 3300, H01L 2348, H01L 2302, H01L 2312

Patent

active

039464164

ABSTRACT:
A low impedance laser diode mounting structure in which the inductive reance and the capacitive reactance are balanced to leave only the pure resistance in the input to a diode. The low impedance laser diode mounting structure comprises a large diameter, conductive central electrode of one potential separated from a conductive housing of the opposite potential by a layer of insulation, such as glass frit. The width of the insulation layer is such that the capacitive reactance caused by the capacitance included between the input electrode, which is generally of positive potential, and the housing, which is usually at ground potential, is equal to the inductive reactance included in the short lead of the input electrode. The input electrode and housing may be made of copper, brass or other high conductivity metals.
One side of the diode is mounted on a heat sink that is electrically connected to the housing. A short lead, made of copper or gold, connects the input electrode to the other side of the diode.

REFERENCES:
patent: 2749488 (1956-06-01), Mayer
patent: 2751527 (1956-06-01), Shower
patent: 3238427 (1966-03-01), Rose
patent: 3303432 (1967-02-01), Garfinkel et al.
patent: 3421203 (1969-01-01), Ullman et al.
patent: 3553499 (1971-01-01), Maguire
patent: 3560275 (1971-02-01), Kressel
patent: 3739241 (1973-06-01), Thillays
patent: 3842262 (1974-10-01), Heitman

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