Low headroom manufacturable bandgap voltage reference

Details Low headroom manufacturable bandgap voltage reference Low headroom manufacturable bandgap voltage reference

1993-06-16

1995-07-18

Wambach, Margaret Rose

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

327538, 327542, 323314, 323316, G05F 110, H01J 1982

Patent

active

054345324

ABSTRACT:
A voltage reference circuit (2) is provided that operates with a minimal amount of headroom. A low threshold voltage transistor (M71) is incorporated into a bandgap reference circuit (Q4, Q3, Q2, Q1, R2 and R1) to eliminate base current errors that a current mirror (Q3 and Q4) of the bandgap may introduce. A low threshold voltage transistor (M72) is incorporated into the gain circuit (Q7) to eliminate base current error that a gain transistor (Q7) may introduce. A third low voltage transistor (M73) may be incorporated into a feedback circuit (QS) to eliminate any voltage variations possibly caused by the addition of the first two low threshold transistors (M71 and M72). Using P channel type MOS low voltage threshold transistors for base drive cancellation allows the circuit to operate effectively with a very low input voltage of around about 2.0 volts. These CMOS low threshold devices absorb process variations in the transistors that may occur between different lots of silicon and thereby provide a more manufacturable voltage reference circuit.

REFERENCES:
patent: 4906863 (1990-03-01), Van Tran
patent: 5120994 (1992-06-01), Joly
patent: 5270581 (1993-12-01), Nakamura
patent: 5325045 (1994-06-01), Sundby

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