Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1998-10-21
2000-03-14
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
438754, 438756, 252 793, H01L 2100
Patent
active
060372710
ABSTRACT:
A process for removing a plurality of layers of different materials from a substrate having a silicon material base, at least one of said layers being a silicon oxide material and at least one other of said layers comprising a metal and the metal layer being located above the silicon oxide layer. The process includes the steps of treating the substrate with a series of chemical formulations adapted to successively remove the materials of the plurality of layers until the silicon material base is exposed, the silicon oxide layer being removed by treatment with HF, wherein the HF treatment to remove said silicon oxide layer comprises exposing the substrate to:
REFERENCES:
patent: 3607480 (1971-09-01), Harrap et al.
patent: 3923567 (1975-12-01), Lawrence
patent: 4009299 (1977-02-01), Flowers et al.
patent: 4261791 (1981-04-01), Shwartzman
patent: 4778532 (1988-10-01), McConnel et al.
patent: 4891325 (1990-01-01), Hezel et al.
patent: 5626715 (1997-05-01), Rostoker
patent: 5656097 (1997-08-01), Olesen et al.
patent: 5933739 (1999-08-01), Lin
Carlson Brent D.
Oikari James R.
Olson Erik D.
FSI International Inc.
Powell William
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