Low haze wafer treatment process

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438754, 438756, 252 793, H01L 2100

Patent

active

060372710

ABSTRACT:
A process for removing a plurality of layers of different materials from a substrate having a silicon material base, at least one of said layers being a silicon oxide material and at least one other of said layers comprising a metal and the metal layer being located above the silicon oxide layer. The process includes the steps of treating the substrate with a series of chemical formulations adapted to successively remove the materials of the plurality of layers until the silicon material base is exposed, the silicon oxide layer being removed by treatment with HF, wherein the HF treatment to remove said silicon oxide layer comprises exposing the substrate to:

REFERENCES:
patent: 3607480 (1971-09-01), Harrap et al.
patent: 3923567 (1975-12-01), Lawrence
patent: 4009299 (1977-02-01), Flowers et al.
patent: 4261791 (1981-04-01), Shwartzman
patent: 4778532 (1988-10-01), McConnel et al.
patent: 4891325 (1990-01-01), Hezel et al.
patent: 5626715 (1997-05-01), Rostoker
patent: 5656097 (1997-08-01), Olesen et al.
patent: 5933739 (1999-08-01), Lin

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Low haze wafer treatment process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low haze wafer treatment process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low haze wafer treatment process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-168949

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.