Low forward voltage drop thyristor

Details Low forward voltage drop thyristor Low forward voltage drop thyristor

1976-08-11

1977-08-23

Ozaki, G.

Metal treatment

Compositions

Heat treating

148 335, 148187, H01L 2126

Patent

active

040438376

ABSTRACT:
A thyristor is provided with a low forward voltage drop (V.sub.f) while providing a typical gate current to trigger (I.sub.g). The working point in the cathode-base region of the thyristor has an impurity concentration less than 5 .times. 10.sup.15 and preferably less than 1 .times. 10.sup.15 per cm.sup.3. The gating portion of the device is selectively irradiated, preferably with electron radiation, to maintain the gate current. The forward blocking voltage (V.sub.BO) and rate of rise of application of forward voltage (dV/dt) of the thyristor may also be maintained at typical values by a fine shunt pattern and/or doping of the shunt portions.

REFERENCES:
patent: 3246172 (1966-04-01), Sanford
patent: 3390020 (1968-06-01), Mandelkorn
patent: 3442722 (1969-05-01), Bauerlein et al.
patent: 3470036 (1969-09-01), Svedberg
patent: 3809582 (1974-05-01), Tarneja et al.
patent: 3881964 (1975-05-01), Cresswell et al.
patent: 3933527 (1976-01-01), Tarneja et al.
patent: 3990091 (1976-11-01), Cresswell et al.

Affiliated with

Also associated with

Rating

Low forward voltage drop thyristor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low forward voltage drop thyristor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low forward voltage drop thyristor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2313721