Low forward voltage drop thyristor

Details Low forward voltage drop thyristor Low forward voltage drop thyristor

1975-01-10

1976-11-02

James, Andrew J.

Metal treatment

Stock

Ferrous

357 29, 357 64, 357 86, 357 90, 148 15, H01L 2974, H01L 700

Patent

active

039900916

ABSTRACT:
A thyristor is provided with a low forward voltage drop (V.sub.f) while providing a typical gate current to trigger (I.sub.g). The working point in the cathode-base region of the thyristor has an impurity concentration less than 5 .times. 10.sup.15 and preferably less than 1 .times. 10.sup.15 per cm.sup.3. The gating portion of the device is selectively irradiated, preferably with electron radiation, to maintain the gate current. The forward blocking voltage (V.sub.BO) and rate of rise of application of forward voltage (dV/dt) of the thyristor may also be maintained at typical values by a fine shunt pattern and/or doping of the shunt portions.

REFERENCES:
patent: 3246172 (1966-04-01), Sanford
patent: 3390020 (1968-06-01), Mandelkorn
patent: 3442722 (1969-05-01), Bauerlein et al.
patent: 3470036 (1969-09-01), Svedberg
patent: 3532910 (1970-10-01), Lee et al.
patent: 3881964 (1975-05-01), Cresswell et al.

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