Low forward voltage drop schottky barrier diode and...

Details Low forward voltage drop schottky barrier diode and... Low forward voltage drop schottky barrier diode and...

2005-07-26

2005-07-26

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

In integrated structure

C257S471000, C257S472000, C257S475000, C438S576000, C438S581000

Reexamination Certificate

active

06921957

ABSTRACT:
A new low forward voltage drop Schottky barrier diode and its manufacturing method are provided. The method includes steps of providing a substrate, forming plural trenches on the substrate, and forming a metal layer on the substrate having plural trenches thereon to form a barrier metal layer between the substrate and the surface metal layer for forming the Schottky barrier diode.

REFERENCES:
patent: 5679966 (1997-10-01), Baliga et al.
patent: 6426541 (2002-07-01), Chang et al.

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