Low firing temperature thick film dielectric layer for...

Details Low firing temperature thick film dielectric layer for... Low firing temperature thick film dielectric layer for...

2005-07-19

2005-07-19

Garrett, Dawn (Department: 1774)

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Including a second component containing structurally defined...

C428S701000, C428S702000, C428S336000, C428S426000, C428S690000, C428S917000, C427S402000, C427S372200, C427S066000

Reexamination Certificate

active

06919126

ABSTRACT:
The present invention is a low firing temperature, composite thick film dielectric layer for an electroluminescent display. The composite thick film dielectric layer comprises;(a) a lower zone layer of a thick film composition comprising;one or more of lead magnesium niobate (PMN), lead magnesium niobate-titanate (PMN-PT), lead titanate, barium titanate and lead oxide; anda glass frit composition comprising lead oxide, boron oxide and silicon dioxide;(b) an upper zone comprising at least one layer of lead zirconate titanate (PZT) and/or barium titanate; and(c) an intermediate composite zone comprising a composite of (a) and (b).

REFERENCES:
patent: 5702565 (1997-12-01), Wu et al.
patent: 5814571 (1998-09-01), Kawakami et al.
patent: 6452309 (2002-09-01), Takeuchi et al.
patent: 6800322 (2004-10-01), Takeishi et al.
patent: WO 00/70917 (2000-05-01), None

Affiliated with

Also associated with

Rating

Low firing temperature thick film dielectric layer for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low firing temperature thick film dielectric layer for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low firing temperature thick film dielectric layer for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3407386