Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1991-04-29
1993-04-27
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250396R, 250423R, H01J 2718
Patent
active
052065162
ABSTRACT:
An ion beam deposition system in which ions of different masses and from different sources are independently steered into different parts of an analyzer magnet to be converged into a single wide beam which maintains a perpendicular relationship between the beam and the target. The beam is decelerated by a slit type deceleration lens to an energy suitable for deposition. The target is then scanned across the decelerated beam. The beam is maintained at high current and low pressure by confining electrons away from the magnet and/or adding energy to the low pressure atmosphere inside the analyzer magnet to produce a plasma of electrons and charged particles in order to provide adequate neutralizing of the space charge of the beam.
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Coultas Dennis K.
Keller John H.
Berman Jack I.
International Business Machines - Corporation
Nguyen Kiet T.
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