Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2000-07-14
2002-11-12
Hannaher, Constantine (Department: 2878)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
C250S370010, C250S370030, C250S370140, C257S429000
Reexamination Certificate
active
06479825
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a particle sensor of the type used in particular in the detectors of particle physics research installations such as particle accelerators, collision apparatus and the like. A sensor of this type is intended in particular to locate accurately the point of passage and of interaction of particles generated during experiments conducted in such apparatus.
2. Description of the Prior Art
A sensor of the above type is described in an article by P. Weiss et al., presented at the 7th International Conference on Solid State Actuators and Detectors under the title “Wafer-scale Technology For Double-sided Silicon Microstrip Particle Detectors”.
The above prior art detector is essentially designed to analyze high-energy particles but it is ill-suited to detecting particles having a low energy, such as &agr; particles or protons, because it is optimized for particles having a very long range.
The object of the invention is to provide a particle sensor enabling sensing of low-energy particles.
SUMMARY OF THE INVENTION
The invention therefore provides a particle sensor, in particular for a detector for analyzing products of collisions in particle physics apparatus, comprising:
a semiconductor substrate,
a plurality of doped regions formed in said substrate and each forming a diode in conjunction with said substrate,
means for defining on top of a first face of said substrate a plurality of current collection areas for respectively collecting currents circulating in each of said diode regions as the result of impacts of particles on said sensor, said means for defining said current collection areas being adapted to be connected to means for using signals formed by the collected currents,
biasing means for biasing each of said diode regions and for bringing said substrate to a totally depleted state, and
means for defining on said first face of said substrate a plurality of particle detection areas each of which is contiguous with a respective current collection area, said means for defining said detection areas having a thickness on top of said substrate which is less than that of said means for defining said current collection areas to enable detection of low-energy particles.
Because of the above features, the sensor has separate areas specifically dedicated to collecting current and detecting particles. The detection areas can therefore have the minimum thickness and do not impede the passage of particles into the substrate.
According to other advantageous features of the invention:
the current collection areas and the detection areas have an elongate shape and are disposed in an alternating arrangement parallel to an edge of the substrate;
the current collection areas surround the detection areas and form respective areas disposed in a matrix on the first face of the substrate;
the means for defining a detection area comprise an oxide layer deposited on the first face of the substrate;
the oxide layer is covered with a thin protective metalization layer;
the face of the substrate opposite the first face comprises a current collecting device;
the thickness of the oxide layer is less than or equal to 50 nm;
the thickness of the protection layer is less than or equal to 40 nm;
the width of a detection area is greater than or equal to that of a current collection area.
Other features and advantages of the invention will become apparent during the course of the following description, which is given by way of example only and with reference to the accompanying drawings.
REFERENCES:
patent: 5355013 (1994-10-01), Parker
Kemmer et al., “New Structures for Position Sensitive Semiconductor Detectors,” Nuclear Instruments and Methods in Physics Research A273, pp. 588-598 (1988).*
Wafer-Scale Technology for Double-Sided Silicon Microstrip Particle Detectors by P. Weiss et al.The 7th International Conference on Solid-State Sensors and Actuators, (Transducers '93) Yokohama Japan pp. 668-671 Jun. 7-10, 1993.
“Semiconductor Radiation Detector,”Patent Abstracts of Japan, vol. 005, No. 121, Publication No. 56 060067 (May 23, 1981) to Toshiba Corp.
“Semiconductor Radiation Detector,” Patent Abstracts of Japan, vol. 006, No. 034, Publication No. 56 151377 (Nov. 24, 1981) to Toshiba Corp.
“New Mesh Type Silicon Photodiode and Its Performance,” Nuclear Instruments & Methods in Physics Research, Section —A: Accelerators, Spectrometers, Detectors and Associated Equipment, NL-Publishing Co., Amsterdam, vol. A327, No. 1 (Mar. 20,, 1993), pp. 148-151.
“A New Microstrip Detector with Double-Sided Readout,” IEEE Transactions on Nuclear Science, US, IEEE, Inc., New York, vol. 37, No. #-I, (Jun. 1, 1990), pp. 1153-1161.
CSEM Centre Suisse d'Electronique et de Microtechnique SA
Hannaher Constantine
Moran Timothy
LandOfFree
Low-energy particle sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low-energy particle sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-energy particle sensor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2948168