Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-10-21
1998-11-03
Anderson, Bruce
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 3730
Patent
active
058312722
ABSTRACT:
A low energy electron beam lithography system uses an 2 KeV electron beam of about three microamperes, a mask formed from a monocrystalline silicon wafer with a membrane thinned to about 0.5 micron, and spaced from an electron-beam sensitive resist-coated substrate about 50 microns and with the thickness of the resist of about 0.1 micron.
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Anderson Bruce
Ostroff Irwin
Torsiglieri Arthur J.
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