Low electrical and thermal impedance semiconductor component and

Details Low electrical and thermal impedance semiconductor component and Low electrical and thermal impedance semiconductor component and

1979-01-12

1980-09-30

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29591, B01J 1700

Patent

active

042247349

ABSTRACT:
A semiconductor component and a method for manufacturing the semiconductor component with low electrical and thermal impedances is provided. The semiconductor component includes a thin semiconductor device with a plurality of layers of various conductivity types forming the active regions and semiconductor/metallic transition layers. The low electrical impedance of the component is achieved by the use of the thin semiconductor device, while the low thermal impedance is provided by a thick pedestal metalization on the semiconductor device.
The method for manufacturing such a device includes the fabrication of at least one semiconductor device on one surface of a semiconductor substrate. The second surface of the semiconductor substrate is selectively etched by a controlled process to form a cavity of limited lateral extent adjacent to each of the semiconductor devices on the one surface. The surfaces of the device and the second surface of the substrate are selectively metalized such that the second surface metalization fills each of the cavities. Thus, after the individual semiconductor components are separated from each other, the thick metalization in the cavities forms a thick pedestal heat sink of the semiconductor component.

REFERENCES:
patent: 2865082 (1958-12-01), Gates
patent: 3427708 (1969-02-01), Schutze
patent: 3716429 (1975-02-01), Napoli
patent: 3820236 (1974-06-01), Haitz
patent: 3864819 (1975-02-01), Ying

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