Low drift resistor structure for amplifiers

Details Low drift resistor structure for amplifiers Low drift resistor structure for amplifiers

1993-02-16

1994-06-07

Pascal, Robert J.

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

330307, H03F 368

Patent

active

053193199

ABSTRACT:
A low drift integrated circuit resistor structure has a forced high end and a forced low end. A sense high connection is located proximate to the force high connection, and a sense low connection is located proximate to the force low connection. The structure also has at least one internal sense connection. This structure can be used in an instrumentation amplifier that includes an operational amplifier which regulates the current between the force high connection and the force low connection in response, in part, to the current sensed in the internal sensing connection of the resistor structure. The sense high connection and the sense low connection form the outputs of the instrumentation amplifier.

REFERENCES:
patent: 4887045 (1989-12-01), Nakayama
patent: 4904951 (1990-02-01), Molina et al.
patent: 4906966 (1990-03-01), Imamura et al.
Amemiya et al., "Electrical Trimming of Heavily Doped Polycrystalline Silicon Resistors," IEEE vol. ED-26, No. 11, Nov. 1979.

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