Low drift resistor structure

Details Low drift resistor structure Low drift resistor structure

1993-02-16

1993-12-07

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Integrated circuits

330295, H03F 3191

Patent

active

052686515

ABSTRACT:
A low drift integrated circuit resistor structure has a forced high end and a forced low end. A sense high connection is located proximate to the force high connection, and a sense low connection is located proximate to the force low connection. The structure also has at least one internal sense connection. This structure can be used in an instrumentation amplifier that includes an operational amplifier which regulates the current between the force high connection and the force low connection in response, in part, to the current sensed in the internal sensing connection of the resistor structure. The sense high connection and the sense low connection form the outputs of the instrumentation amplifier.

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patent: 5047827 (1991-09-01), Clark, Jr. et al.
Holloway, Peter, "Trimless 16B Digital Potentiometer," 1984 IEEE International Solid-State Circuits Conference, Feb. 22, 1984 pp. 66-67, 320-321.
Dorler, et al., "Integrated Resistor Contacts," IBM Technical Disclosure Bulletin, vol. 15, Apr. 1973, p. 3383.
Ting, et al., "A Study of the Contacts of A Diffused Resistor," Solid-State Electronics, vol. 14, pp. 433-438, Nov. 25, 1970.

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