Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2007-08-07
2007-08-07
Crane, Sara (Department: 2811)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S047000, C257S094000, C257S096000, C257S745000
Reexamination Certificate
active
10780526
ABSTRACT:
A repeatable and uniform low doped layer is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer disposed atop a much more highly doped nitride semiconductor layer. The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased.
REFERENCES:
patent: 5158909 (1992-10-01), Ohtsuka et al.
patent: 5296395 (1994-03-01), Khan et al.
patent: 5399887 (1995-03-01), Weitzel et al.
patent: 5602418 (1997-02-01), Imai et al.
patent: 5625202 (1997-04-01), Chai
patent: 5789760 (1998-08-01), Irikawa et al.
patent: 5877558 (1999-03-01), Nakamura et al.
patent: 6437374 (2002-08-01), Northrup et al.
patent: 6455877 (2002-09-01), Ogawa et al.
patent: 6479844 (2002-11-01), Taylor
patent: 6507041 (2003-01-01), Nakamura et al.
patent: 6555451 (2003-04-01), Kub et al.
patent: 6555452 (2003-04-01), Nikolaev et al.
patent: 6586777 (2003-07-01), Yuasa et al.
patent: 6586781 (2003-07-01), Wu et al.
patent: 6610995 (2003-08-01), Nakamura et al.
patent: 6653215 (2003-11-01), Brown et al.
patent: 6712478 (2004-03-01), Sheu et al.
patent: 2001/0034116 (2001-10-01), Lee et al.
patent: 2002/0127787 (2002-09-01), Huang et al.
patent: 2002/0155634 (2002-10-01), D'Evelyn et al.
patent: 2002/0190263 (2002-12-01), Hata et al.
patent: 2003/0006415 (2003-01-01), Yokogawa et al.
patent: 2003/0010993 (2003-01-01), Nakamura et al.
patent: 2003/0015708 (2003-01-01), Parikh et al.
patent: 2003/0062525 (2003-04-01), Parikh et al.
patent: 2003/0075728 (2003-04-01), Tooi et al.
patent: 2003/0141518 (2003-07-01), Yokogawa et al.
patent: 1 189 287 (2002-03-01), None
patent: WO-03/026021 (2003-03-01), None
“High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN” Applied Physics Letters, American Institute of Physics, New York, US, vol. 68 No. 9, Feb. 26, 1996; pp. 1267-1269.
Lin Yow-Jon et al: “Nitrogen-vacancy-related defects and Fermi level pinning in n-GaN Schottky diodes” Aug. 1, 2003, Journal of Applied Physics, American Institute of Physics, New York, US, pp. 1819-1822.
Yanagihara, et al., “Development of GaN-Based Electronic Device on Si”, Sanken Technical Report, vol. 35, No. 1 (2003), pp. 11-14, Japan (English—language translation of Japanese—language publication).
Ceruzzi Alex D.
Liu Linlin
Murphy Michael
Pophristic Milan
Shelton Bryan S.
Crane Sara
Gebremariam Samuel A.
Lerner David Littenberg Krumholz & Mentlik LLP
Velox Semiconductor Corporation
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